DocumentCode
1149714
Title
Recombination and Joule heating effects in GTO thyristors with spatially varying lifetimes
Author
Mawby, P.A. ; Hu, Z.B. ; Towers, M.S. ; Evans, M.J. ; Board, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK
Volume
141
Issue
4
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
292
Lastpage
298
Abstract
In the paper the forward conduction characteristics of the GTO thyristor are studied. A two-dimensional simulation is performed which solves the semiconductor device equations self consistently with the equation for lattice heat conduction. The significance of the different recombination mechanisms and spatially varying lifetime is considered, along with the relative effects of different mobility models. An experimental comparison with a 2.5 kV device is made and good agreement is found. The effects of heat dissipation in the structure are also considered
Keywords
carrier lifetime; carrier mobility; electron-hole recombination; semiconductor device models; thyristors; 2.5 kV; GTO thyristors; Joule heating effects; forward conduction characteristics; heat dissipation; lattice heat conduction; mobility models; recombination mechanisms; semiconductor device equations; spatially varying lifetime; spatially varying lifetimes; two-dimensional simulation;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19941104
Filename
311854
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