• DocumentCode
    1149721
  • Title

    Base current reversal in bipolar transistors and circuits: a review and update

  • Author

    Yuan, J.S.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    141
  • Issue
    4
  • fYear
    1994
  • fDate
    8/1/1994 12:00:00 AM
  • Firstpage
    299
  • Lastpage
    306
  • Abstract
    A detailed study of base current reversal in silicon bipolar transistors and GaAs heterojunction bipolar transistors has been made. The physics of impact ionisation is presented followed by modelling of avalanche multiplication in devices. The effects of base current reversal on analogue and digital circuit operation are discussed
  • Keywords
    bipolar integrated circuits; bipolar transistors; heterojunction bipolar transistors; impact ionisation; semiconductor device models; GaAs; Si; analogue circuit operation; avalanche multiplication; base current reversal; bipolar transistors; digital circuit operation; heterojunction bipolar transistors; impact ionisation;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:19941101
  • Filename
    311855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149721