DocumentCode
1149722
Title
High-voltage polycrystalline CdSe thin-film transistors
Author
De Baets, Johan ; Vanfleteren, Jan ; De Rycke, Igor ; Doutreloigne, Jan ; Van Calster, Andre ; De Visschere, Patrick
Author_Institution
Lab. of Electron., Ghent State Univ., Belgium
Volume
37
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
636
Lastpage
639
Abstract
The properties of self-aligned high-voltage CdSe thin-film transistors (TFTs) are described. By analyzing the different failure mechanisms, it is found that In-doped CdSe makes device operation up to 200 V feasible. Furthermore, the high-voltage CdSe TFT shows excellent low off currents and high transconductance
Keywords
II-VI semiconductors; cadmium compounds; failure analysis; leakage currents; power transistors; semiconductor device testing; thin film transistors; 200 V; CdSe thin film transistors; failure mechanisms; leakage currents; self-aligned high voltage TFT; semiconductors; thermal breakdown; transconductance; Breakdown voltage; Electric breakdown; Fabrication; Failure analysis; Insulation; Leakage current; Lighting; Semiconductor device breakdown; Thin film transistors; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.47767
Filename
47767
Link To Document