DocumentCode :
1149757
Title :
Time behavior of the internal Q switching in GaAs lasers under electron-beam excitation
Author :
Masuyama, Akio ; Kawabe, Mitsuo ; Masuda, Kohzoh ; Namba, Susumu
Author_Institution :
Osaka University, Osaka, Japan
Volume :
9
Issue :
2
fYear :
1973
fDate :
2/1/1973 12:00:00 AM
Firstpage :
324
Lastpage :
327
Abstract :
Time-resolved spectra of an internal 
-switching emission of electron-beam-excited GaAs lasers were measured. The spectra shifted to longer wavelengths at the rate of 5.63 Å/ns at 85 K. Time-resolves spectra of a normal laser emission were also measured to be shifted to longer wavelengths at the rate of about 0.3 Å/ns. This remarkable difference of the spectral shifts can be understood if the former shift is caused by the quasi-Fermi level in the conduction band and the latter shift is caused by thermal effects.
-switching emission of electron-beam-excited GaAs lasers were measured. The spectra shifted to longer wavelengths at the rate of 5.63 Å/ns at 85 K. Time-resolves spectra of a normal laser emission were also measured to be shifted to longer wavelengths at the rate of about 0.3 Å/ns. This remarkable difference of the spectral shifts can be understood if the former shift is caused by the quasi-Fermi level in the conduction band and the latter shift is caused by thermal effects.Keywords :
Current density; Delay effects; Diode lasers; Electron traps; Gallium arsenide; Laser excitation; Laser theory; Laser transitions; Semiconductor lasers; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077451
Filename :
1077451
Link To Document :
