• DocumentCode
    1149771
  • Title

    ECR plasma etching of chemically vapour deposited diamond thin films

  • Author

    Pearton, S.J. ; Katz, Al ; Ren, Fengyuan ; Lothian, J.R.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    9
  • fYear
    1992
  • fDate
    4/23/1992 12:00:00 AM
  • Firstpage
    822
  • Lastpage
    824
  • Abstract
    Arc jet deposited films of diamond have been patterned using Au or photoresist masks and electron cyclotron resonance (ECR) O2 discharges. To achieve anisotropic features, additional RF-induced DC biasing of the sample is necessary. Diamond etch rates of 2000 AA/min were obtained for 1 mtorr, 400 W O2 discharges with -80 V DC bias. The etch rates increase with either pressure or microwave power as a result of a greater density of atomic oxygen in the plasma. Chlorine (BCl3)-based did not product significant etching of the diamond, but SF6/O2 mixtures had slightly faster rates than O2 alone.
  • Keywords
    CVD coatings; diamond; elemental semiconductors; semiconductor thin films; sputter etching; -80 V; 1 mtorr; 400 W; Au masks; BCl 3 discharges; C; CVD; DC bias; ECR plasma etching; O 2 discharges; RF-induced DC biasing; SF 6-O 2 mixtures; arc jet deposited films; diamond thin films; etch anisotropy; etch rates; photoresist masks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920520
  • Filename
    135115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149771