Title :
1.5 mu m compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays
Author :
Zah, C.E. ; Lin, P.S.D. ; Favire, F. ; Pathak, Bimalendu ; Bhat, Ritesh ; Caneau, Catherine ; Andreadakis, N.C. ; Koza, M.A. ; Lee, T.P. ; Wu, T.C. ; Lau, K.Y.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
4/23/1992 12:00:00 AM
Abstract :
The wide gain spectrum of compressive-strained multiquantum-well active layers was used to fabricate 20-wavelength distributed-feedback laser arrays. A record wide-wavelength span of 131 nm in the 1.5 mu m wavelength region was demonstrated. The maximum intrinsic modulation response, measured by a parasitic-free optical modulation technique, reaches 16 GHz.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; gradient index optics; indium compounds; optical modulation; semiconductor laser arrays; 1.5 micron; 20-wavelength distributed-feedback laser arrays; GRINSCH structure; In 0.8Ga 0.2As-Ga xIn 1-xAs yP 1-y; compressive strained MQW DFB laser; compressive-strained multiquantum-well active layers; intrinsic modulation response; parasitic-free optical modulation technique; wide gain spectrum; wide-wavelength span;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920521
