• DocumentCode
    1149788
  • Title

    Selective gate recess etching of GaInAs/AlInAs based HEMTs using a CH4/H2 plasma without subsequent annealing

  • Author

    Patrick, W. ; Bachtold, W.

  • Volume
    30
  • Issue
    15
  • fYear
    1994
  • fDate
    7/21/1994 12:00:00 AM
  • Firstpage
    1251
  • Lastpage
    1252
  • Abstract
    A methane hydrogen plasma has been used to define gate recesses through a polymer mask selectively on GaInAs/InAlAs based HEMT devices. No subsequent annealing was necessary and the devices exhibited comparable gm and idss values with much better uniformity than conventional wet etched devices
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; masks; semiconductor technology; sputter etching; CH4/H2 plasma; GaInAs-AlInAs; GaInAs/AlInAs based HEMTs; drain-source current; methane hydrogen plasma; polymer mask; selective gate recess etching; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940827
  • Filename
    311872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149788