Title :
Selective gate recess etching of GaInAs/AlInAs based HEMTs using a CH4/H2 plasma without subsequent annealing
Author :
Patrick, W. ; Bachtold, W.
fDate :
7/21/1994 12:00:00 AM
Abstract :
A methane hydrogen plasma has been used to define gate recesses through a polymer mask selectively on GaInAs/InAlAs based HEMT devices. No subsequent annealing was necessary and the devices exhibited comparable gm and idss values with much better uniformity than conventional wet etched devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; masks; semiconductor technology; sputter etching; CH4/H2 plasma; GaInAs-AlInAs; GaInAs/AlInAs based HEMTs; drain-source current; methane hydrogen plasma; polymer mask; selective gate recess etching; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940827
