Title :
High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy
Author :
Enquist, P.M. ; Sekula-Moise, P.A. ; Vernon, S.M. ; Haven, V.E. ; Morris, A.S. ; Trew, R.J. ; Hutchby, J.A.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
fDate :
4/23/1992 12:00:00 AM
Abstract :
Lattice matched GaInAs/InP Npn heterojunction bipolar transistors (HBTs) have been grown by lower pressure metal organic vapour phase epitaxy (MOVPE) and precessed with non-selfaligned fabrication techniques. The transistors exhibit a cutoff frequency of 60 GHz and maximum oscillation frequency of 32 GHz which are the highest values reported to date for GaInAs/InP HBTs grown by MOVPE.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 32 GHz; 60 GHz; InP-InGaAs; MOVPE; Npn HBT; cutoff frequency; heterojunction bipolar transistor; high speed; lattice matched transistors; low pressure metal organic vapour phase epitaxy; maximum oscillation frequency; nonselfaligned fabrication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920526
