Title :
Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts
Author :
Fathollahnejad, H. ; Mathine, D.L. ; Droopad, Ravi ; Maracas, G.N. ; Daryanani, S.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
7/21/1994 12:00:00 AM
Abstract :
Vertical-cavity surface-emitting lasers (VCSELs) have been integrated onto an aluminium coated silicon substrate. The InGaAs top-emitting VCSELs were grown by molecular beam epitaxy and individual lasers were defined by high energy proton implantation. The substrate was removed by a new substrate removal process and the lasers were bonded to an aluminised silicon substrate using a Pd/Ge/InSn contact. Threshold currents below 5.5 mA and output powers of ~1 mW were obtained for 40 μm VCSELs bonded to Si
Keywords :
III-V semiconductors; gallium arsenide; germanium; indium compounds; ion implantation; laser cavity resonators; molecular beam epitaxial growth; ohmic contacts; optical workshop techniques; palladium; semiconductor laser arrays; substrates; 1 mW; 40 micron; 5.5 mA; InGaAs; MBE growth; Pd-Ge-InGaAs; Pd/Ge contacts; Si; Si substrates; high energy proton implantation; molecular beam epitaxy; surface-emitting lasers; top-emitting VCSELs; vertical-cavity laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940839
