Title :
High power and high efficiency operation of Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers (λ≃0.98 μm)
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
7/21/1994 12:00:00 AM
Abstract :
High power and high quantum efficiency Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers emitting at 0.98 μm are reported. A CW output power as high as 580 mW and single lateral mode power up to 280 mW were achieved for the Al-free ridge waveguide lasers at room temperature. The lasers exhibited a high internal quantum efficiency of 99% and low internal waveguide loss of 3.2 cm-1. A high characteristic temperature of 217 K and low threshold current density of 109 A/cm2 were also obtained. The results are the best obtained for Al-free 0.98 μm pumping lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser modes; optical losses; semiconductor lasers; semiconductor quantum wells; 0.98 micron; 217 K; 280 mW; 580 mW; 99 percent; CW output power; InGaAs-GaInAsP-GaInP; InGaAs/GaInAsP/GaInP GRINSCH SQW lasers; characteristic temperature; internal waveguide loss; quantum efficiency; ridge waveguide lasers; single lateral mode power; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940816
