High power and high efficiency operation of Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers (λ≃0.98 μm)

High power and high quantum efficiency Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers emitting at 0.98 μm are reported. A CW output power as high as 580 mW and single lateral mode power up to 280 mW were achieved for the Al-free ridge waveguide lasers at room temperature. The lasers exhibited a high internal quantum efficiency of 99% and low internal waveguide loss of 3.2 cm^-1. A high characteristic temperature of 217 K and low threshold current density of 109 A/cm² were also obtained. The results are the best obtained for Al-free 0.98 μm pumping lasers