Title :
Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Author :
Kunzel, H. ; Grote, N. ; Albrecht, P. ; Bottcher, J. ; Bornholdt, Carsten
Author_Institution :
Heinrich-Hertz Inst. fur Nachrichtentech. Berlin GmbH, Germany
fDate :
4/23/1992 12:00:00 AM
Abstract :
The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; molecular beam epitaxial growth; optical waveguides; refractive index; semiconductor epitaxial layers; 1.06 micron; 1.55 micron; 1E4 ohmcm; 400 to 450 C; In 0.52Ga 0.18Al 0.30As-InP; InP substrate; MBE growth; optical waveguides; propagation losses; refractive index; resistivity; rib waveguides; temperature range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920534
