Title :
Strained single quantum well (SSQW) GaInP/AlInP visible lasers fabricated by novel shutter control method in gas source molecular beam epitaxy
Author :
Nomura, I. ; Kishino, Katsumi ; Kaneko, Yuya
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fDate :
4/23/1992 12:00:00 AM
Abstract :
A novel shutter control method for growing GaInP strained layers without growth interruption by gas source molecular beam epitaxy (GSMBE) is presented. By using the method, strained single quantum well (SSQW) GaInP/AlInP visible lasers were fabricated by GSMBE, for the first time. The threshold current density of the laser was 329 A/cm2 for the compressive strained case (700 nm in wavelength) and 1.7 kA/cm2 for the tensile strained case (634 nm).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 634 to 700 nm; GSMBE; GaInP-AlInP; SSQW; compressive strained case; gas source molecular beam epitaxy; semiconductors; shutter control method; strained SQW; strained single quantum well; tensile strained case; threshold current density; uninterrupted epitaxial growth; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920538
