InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

Author

Zucker, J.E. ; Jones, K.L. ; Tell, B. ; Brown-Goebeler, K. ; Joyner, Charles H. ; Miller, B.I. ; Young, Matthew G.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

28

Issue

9

fYear

1992

fDate

4/23/1992 12:00:00 AM

Firstpage

853

Lastpage

855

Abstract

Formation of buried InGaAsP/InP quantum well waveguides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55 mu m. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique the authors achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; ion implantation; optical waveguides; phosphorus; semiconductor quantum wells; 1.55 micron; InGaAsP-InP:P; buried heterostructure waveguides; buried quantum well waveguides; etchless implant technique; index difference; ion implantation; less-critical processing steps; manufacturable; mode intensities; near field intensity patterns; propagation loss; scattering loss reduction; semiconductors; singlemode pin waveguides; thermal annealing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920539

Filename

135134