Title :
Buried channel heterojunction field-effect transistor (BCHFET)
Author :
Taylor, Graham W. ; Kiely, P.A. ; Evaldsson, P.A. ; Cooke, Patrick ; Docter, D.P.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
4/23/1992 12:00:00 AM
Abstract :
A new p-channel field-effect transistor is described in which the threshold is controlled by acceptor doping in a channel below the heterointerface. The transconductance is determined by the conduction in a filled undoped quantum well at the heterointerface in addition to the doped channel. For a nominal 1*50 mu m2 FET a transconductance of 42 mS/mm and a gate conduction of 30 mu A are achieved at a gate voltage of -1 V. As a p-channel FET it is an ideal complement to N-Channel HFETs. A method is proposed to incorporate the n-channel HFET and the p-channel BCHFET into a complementary inverter.
Keywords :
high electron mobility transistors; junction gate field effect transistors; -1 V; 1 micron; 30 muA; 50 micron; BCHFET; acceptor doping; complementary inverter; doped channel; filled undoped quantum well; gate conduction; gate voltage; heterointerface; p-channel FET; p-channel HFET; threshold control; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920542
