Title :
Stable 30 mW operation at 50 degrees C for strained MQW AlGaInP visible laser diodes
Author :
Ueno, Yukiko ; Fujii, Hiromitsu ; Sawano, Hisaya ; Endo, Kazuhiro
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
4/23/1992 12:00:00 AM
Abstract :
High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50 degrees C for more than 1000 h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10-4 h-1.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1000 h; 30 mW; 50 C; AlGaInP; characteristic temperature; lattice-mismatched; operating current increase; semiconductors; strained MQW; strained multiquantum-well; threshold current density; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920543
