• DocumentCode
    1150016
  • Title

    Gain-current relation for GaAs lasers with n-type and undoped active layers

  • Author

    Stern, Frakk

  • Author_Institution
    IBM Thomas J. Watson Research Laboratory, Yorktown Heights, NY, USA
  • Volume
    9
  • Issue
    2
  • fYear
    1973
  • fDate
    2/1/1973 12:00:00 AM
  • Firstpage
    290
  • Lastpage
    294
  • Abstract
    Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers.
  • Keywords
    Charge carrier processes; Current density; Effective mass; Gallium arsenide; Impurities; Optical computing; Radiative recombination; Spontaneous emission; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1973.1077478
  • Filename
    1077478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1150016