• DocumentCode
    1150022
  • Title

    Extended trench-gate power UMOSFET structure with ultralow specific on-resistance

  • Author

    Venkatraman, Prasad ; Baliga, B. Jayant

  • Volume
    28
  • Issue
    9
  • fYear
    1992
  • fDate
    4/23/1992 12:00:00 AM
  • Firstpage
    865
  • Lastpage
    867
  • Abstract
    An ultralow specific on-resistance power UMOSFET structure with the trench-gate extending down to the N+ substrate is presented. Specific on-resistances in the range 100-200 mu Omega cm2 have been experimentally demonstrated for devices capable of supporting up to 25 V. Comparison of theoretical and experimental results is provided.
  • Keywords
    insulated gate field effect transistors; power transistors; 25 V; N + substrate; UMOSFET structure; experimental results; on-resistances; power MOSFET; trench gate extension; ultralow specific on-resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920546
  • Filename
    135141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1150022