DocumentCode :
1150026
Title :
Improved responsivity and sensitivity characteristics of the thin-film bismuth bolometer
Author :
Block, W.H. ; Gaddy, O.L.
Author_Institution :
University of Ilinois, Urbana, IL, USA
Volume :
9
Issue :
2
fYear :
1973
fDate :
2/1/1973 12:00:00 AM
Firstpage :
252
Lastpage :
254
Abstract :
A new design for the nanosecond response time room-temperature thin-film bismuth bolometer has resulted in much improved responsivity and sensitivity characteristics. A responsivity of 
V/W and a sensitivity (NEP) of 
W/Hz1/2is reported. This is an improvement by a factor of 45 for the responsivity and a factor of 70 for the sensitivity over that previously reported for the bismuth-silver bolometer.
V/W and a sensitivity (NEP) of W/Hz1/2is reported. This is an improvement by a factor of 45 for the responsivity and a factor of 70 for the sensitivity over that previously reported for the bismuth-silver bolometer.Keywords :
Bismuth; Bolometers; Delay; Neodymium; Noise level; Silver; Substrates; Temperature sensors; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077479
Filename :
1077479
Link To Document :
