Title :
Linear and nonlinear intersub-band optical absorption in diffusion-induced AlGaAs/GaAs quantum well at far IR wavelengths
Author :
Li, E.H. ; Weiss, B.L. ; Laszcz, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
4/23/1992 12:00:00 AM
Abstract :
The effect of interdiffusion on the intersub-band absorption coefficient of AlGaAs/GaAs single quantum well structures has been analysed, based on the linear and nonlinear contributions from the first and third order susceptibilities, respectively. The results show that interdiffusion may be used to tune the intersub-band absorption over a large wavelength range of tens of micrometres together with a uniform absorption coefficient.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; infrared detectors; nonlinear optical susceptibility; semiconductor quantum wells; AlGaAs-GaAs; SQW; far IR wavelengths; first order susceptibilities; interdiffusion; intersub-band absorption; linear optical absorption; nonlinear optical absorption; single quantum well structures; third order susceptibilities; uniform absorption coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920558
