Title :
Silicon-on-insulator `HRes´ circuit
Author :
Marshall, G.F. ; Collins, Stephen ; Bunyan, R.J.T.
Author_Institution :
Defense Res. Agency, Malvern
fDate :
7/21/1994 12:00:00 AM
Abstract :
Retinal circuits in bulk CMOS are complicated by the need to compensate for the back-gate effect. However, partially depleted silicon-on-insulator devices have a greatly reduced back-gate effect compared to bulk CMOS. Silicon retinae implemented using SOI technology would therefore be smaller and simpler than the bulk CMOS equivalent. This could lead to considerable improvements in resolution and yield
Keywords :
CMOS integrated circuits; SIMOX; analogue processing circuits; elemental semiconductors; image processing equipment; neural chips; silicon; CMOS IC; SOI technology; Si; partially depleted SOI devices; retinal circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940819
