Title :
Microwave performance of GaN MESFETs
Author :
Binari, S.C. ; Rowland, L.B. ; Kruppa, W. ; Kelner, G. ; Doverspike, K. ; Gaskill, D. Kurt
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
7/21/1994 12:00:00 AM
Abstract :
GaN MESFETs have been fabricated with a 0.25 μm thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20 mS/mm. For a 0.7 μm gate length device, the measured fT and fmax were 8 and 17 GHz, respectively
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium compounds; semiconductor device models; solid-state microwave devices; vapour phase epitaxial growth; 0.25 micron; 0.7 micron; 20 mS/mm; 8 to 17 GHz; GaN; MESFETs; MOVPE; high resistivity GaN layer; metal organic VPE; microwave performance; submicron gate length device; transconductance; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940833
