Title :
Proton isolation of Si δ-doped GaAs
Author :
Kelly, Michael J. ; Lancefield, D. ; Gwilliam, R.M. ; Ritchie, D.A. ; Jones, Geb A. C. ; Linfield, Edmund H.
fDate :
8/4/1994 12:00:00 AM
Abstract :
The use of proton isolation to define Si δ-doped GaAs device structures is reported and was found to be effective in defining δ-doped layers with a two-dimensional electron density of up to 6.8×1012 cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; ion implantation; semiconductor doping; silicon; δ-doped layers; GaAs device structures; GaAs:Si; Si δ-doped GaAs; delta doping; electron transport characteristics; proton isolation; two-dimensional electron density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940832
