Title :
First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
Author :
Benchimol, J.L. ; Driad, Rachid ; Launay, P.
fDate :
8/4/1994 12:00:00 AM
Abstract :
A current gain of 120, for a base sheet resistance of 400 Ω/□, is reported in a carbon doped base heterojunction bipolar transistor grown by chemical beam epitaxy (CBE) without hydride sources. This result is to the authors´ knowledge, the best obtained with hydride free CBE for this device
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; DMAAs; GaInP-GaAs:C; TBP; base sheet resistance; carbon doped HBT; chemical beam epitaxy; current gain; heterojunction bipolar transistor; hydride free CBE;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940844
