Title :
Active GaAs sensor element for dynamic pressure measurements
Author :
Schweeger, G. ; Lang, C. ; Fricke, Kyle ; Hartnagel, H.L. ; Dolt, R. ; Hohenberg, G.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt
fDate :
8/4/1994 12:00:00 AM
Abstract :
A piezoelectric pressure sensor is presented which consists of a GaAs MESFET in which the transverse piezoelectric effect is used to charge the gate pad. The MESFET itself acts as an integrated charge amplifier. The sensor gives output signals which are comparable to those of a much bulkier commercial measurement system. The sensitivity achieved is 200 mV/bar in the range 0-20 bar
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric sensing devices; gallium arsenide; piezoelectric transducers; pressure sensors; 0 to 20 bar; GaAs; MESFET; active GaAs sensor element; dynamic pressure measurements; integrated charge amplifier; piezoelectric pressure sensor; transverse piezoelectric effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940910
