DocumentCode
1150290
Title
Active GaAs sensor element for dynamic pressure measurements
Author
Schweeger, G. ; Lang, C. ; Fricke, Kyle ; Hartnagel, H.L. ; Dolt, R. ; Hohenberg, G.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1355
Lastpage
1356
Abstract
A piezoelectric pressure sensor is presented which consists of a GaAs MESFET in which the transverse piezoelectric effect is used to charge the gate pad. The MESFET itself acts as an integrated charge amplifier. The sensor gives output signals which are comparable to those of a much bulkier commercial measurement system. The sensitivity achieved is 200 mV/bar in the range 0-20 bar
Keywords
III-V semiconductors; Schottky gate field effect transistors; electric sensing devices; gallium arsenide; piezoelectric transducers; pressure sensors; 0 to 20 bar; GaAs; MESFET; active GaAs sensor element; dynamic pressure measurements; integrated charge amplifier; piezoelectric pressure sensor; transverse piezoelectric effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940910
Filename
311940
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