• DocumentCode
    1150323
  • Title

    TFEL optoelectronic integrated circuit on Si

  • Author

    Thomas, C.B. ; Stevens, R.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bradford Univ.
  • Volume
    30
  • Issue
    16
  • fYear
    1994
  • fDate
    8/4/1994 12:00:00 AM
  • Firstpage
    1350
  • Lastpage
    1351
  • Abstract
    A unique optoelectronic integrated circuit fabricated with AC thin film electroluminescent (TFEL) devices directly onto the drain of an Si DMOS transistor is demonstrated. DMOS switching controls the high voltage ratio between the TFEL device and DMOS transistor. Active matrix addressing for electroluminescent devices is demonstrated using CMOS circuitry
  • Keywords
    CMOS integrated circuits; integrated optoelectronics; luminescent devices; AC thin film electroluminescent devices; CMOS circuitry; DMOS transistor; Si; TFEL optoelectronic integrated circuit; active matrix addressing; voltage ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940890
  • Filename
    311943