DocumentCode
1150323
Title
TFEL optoelectronic integrated circuit on Si
Author
Thomas, C.B. ; Stevens, R.
Author_Institution
Dept. of Electr. & Electron. Eng., Bradford Univ.
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1350
Lastpage
1351
Abstract
A unique optoelectronic integrated circuit fabricated with AC thin film electroluminescent (TFEL) devices directly onto the drain of an Si DMOS transistor is demonstrated. DMOS switching controls the high voltage ratio between the TFEL device and DMOS transistor. Active matrix addressing for electroluminescent devices is demonstrated using CMOS circuitry
Keywords
CMOS integrated circuits; integrated optoelectronics; luminescent devices; AC thin film electroluminescent devices; CMOS circuitry; DMOS transistor; Si; TFEL optoelectronic integrated circuit; active matrix addressing; voltage ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940890
Filename
311943
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