DocumentCode :
1150389
Title :
Amorphous-silicon solar cells with screen-printed metallization
Author :
Baert, Kris A. ; Roggen, J. ; Nijs, Johan F. ; Mertens, Robert P.
Author_Institution :
Interuniv. Micro-Electron. Center, Heverlee, Belgium
Volume :
37
Issue :
3
fYear :
1990
fDate :
3/1/1990 12:00:00 AM
Firstpage :
702
Lastpage :
707
Abstract :
The use of screen printing for the back-side metallization of amorphous-silicon solar cells on glass is proposed. Compared with the conventional aluminum evaporation process, screen printing is attractive because if offers high throughput and because direct patterning is performed during the printing process. The critical point in realizing a thick-film screen-printed contact on amorphous-silicon solar cells is found to be the contact resistivity between the contact and the n-layer. Contact resistivities below 1 Ω-cm2 have been obtained using a microcrystalline instead of an amorphous n+ layer and a screen-printed contact based on Mo, Ti, or Ni. Amorphous-silicon solar cells with a screen-printed back contact had a performance comparable with that of cells with an evaporated Al contact, resulting in an efficiency of 9.7%. Spectral response measurements demonstrated that the screen-printed contact is an efficient reflector of long-wavelength photons, resulting in a high red response due to internal light trapping
Keywords :
amorphous semiconductors; contact resistance; elemental semiconductors; hydrogen; metallisation; plasma CVD coatings; silicon; solar cells; 9.7 percent; Al evaporation process; Cr; Cu; Mo; Si-glass solar cell; Ti; amorphous Si:H solar cells; back-side metallization; contact resistivity; direct patterning; internal light trapping; long-wavelength photons; plasma CVD; reflector; screen printing; semiconductor; spectral response; Aluminum; Conductive films; Conductivity; Glass; Metallization; Photovoltaic cells; Polymer films; Printing; Temperature; Throughput;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.47775
Filename :
47775
Link To Document :
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