• DocumentCode
    1150389
  • Title

    Amorphous-silicon solar cells with screen-printed metallization

  • Author

    Baert, Kris A. ; Roggen, J. ; Nijs, Johan F. ; Mertens, Robert P.

  • Author_Institution
    Interuniv. Micro-Electron. Center, Heverlee, Belgium
  • Volume
    37
  • Issue
    3
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    702
  • Lastpage
    707
  • Abstract
    The use of screen printing for the back-side metallization of amorphous-silicon solar cells on glass is proposed. Compared with the conventional aluminum evaporation process, screen printing is attractive because if offers high throughput and because direct patterning is performed during the printing process. The critical point in realizing a thick-film screen-printed contact on amorphous-silicon solar cells is found to be the contact resistivity between the contact and the n-layer. Contact resistivities below 1 Ω-cm2 have been obtained using a microcrystalline instead of an amorphous n+ layer and a screen-printed contact based on Mo, Ti, or Ni. Amorphous-silicon solar cells with a screen-printed back contact had a performance comparable with that of cells with an evaporated Al contact, resulting in an efficiency of 9.7%. Spectral response measurements demonstrated that the screen-printed contact is an efficient reflector of long-wavelength photons, resulting in a high red response due to internal light trapping
  • Keywords
    amorphous semiconductors; contact resistance; elemental semiconductors; hydrogen; metallisation; plasma CVD coatings; silicon; solar cells; 9.7 percent; Al evaporation process; Cr; Cu; Mo; Si-glass solar cell; Ti; amorphous Si:H solar cells; back-side metallization; contact resistivity; direct patterning; internal light trapping; long-wavelength photons; plasma CVD; reflector; screen printing; semiconductor; spectral response; Aluminum; Conductive films; Conductivity; Glass; Metallization; Photovoltaic cells; Polymer films; Printing; Temperature; Throughput;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.47775
  • Filename
    47775