Title :
A new DC model of HBT´s including self-heating effect suitable for circuit simulators
Author :
Dupuis, John ; Hajji, Rached ; Ghannouchi, Fadhel M. ; Saab, Khaled ; Lavallee, Sylvain
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
fDate :
12/1/1995 12:00:00 AM
Abstract :
This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS
Keywords :
circuit analysis computing; heterojunction bipolar transistors; semiconductor device models; DC model; HBTs; HP-MDS; HSPICE; IV characteristics; collector current; nonlinear circuit simulators; optimization; self-heating effects; Circuit simulation; Convergence; Electromagnetic heating; Heterojunction bipolar transistors; Microwave circuits; Microwave devices; Microwave theory and techniques; Microwave transistors; Nonlinear circuits; Nonlinear equations; Parameter extraction; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
