DocumentCode
1150553
Title
New low-noise heterojunction transit-time device for millimetre wave
Author
Bauer, Thomas ; Rosch, M. ; Claassen, M. ; Harth, W.
Author_Institution
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1319
Lastpage
1320
Abstract
A new two-terminal millimetre wave transit-time device is presented that can be used for power generation. Theoretical calculations predict good noise properties. DC measurements are in agreement with a theoretical model of current transport across the employed GaAs/GaAlAs heterojunction. A first realisation of the structure leads to several milliwatts of power output at 60 GHz under pulsed conditions
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor device models; semiconductor device noise; solid-state microwave devices; transit time devices; 60 GHz; DC measurements; GaAs-GaAlAs; GaAs/GaAlAs heterojunction; HEBITT; current transport; low-noise heterojunction transit-time device; noise properties; power generation; pulsed conditions; theoretical model; two-terminal millimetre wave device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940911
Filename
311964
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