Title :
CW GaAs MITATT source on copper heatsink up to 160 GHz
Author :
Pobl, M. ; Bogner, Werner ; Gaul, L.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen
fDate :
8/4/1994 12:00:00 AM
Abstract :
The performance of a GaAs pn-junction transit time device with mixed tunnel-avalanche breakdown is described. At 164 GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28 dB at 160 GHz
Keywords :
III-V semiconductors; avalanche diodes; gallium arsenide; semiconductor device noise; solid-state microwave devices; transit time devices; tunnel diodes; 1 mW; 160 GHz; 28 dB; CW GaAs MITATT source; CW output power; GaAs; copper heatsink; fundamental mode; millimetre-wave devices; mixed tunnel-avalanche breakdown; noise measure; pn-junction transit time device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940891
