Title :
Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers
Author :
Smith, G.M. ; Hughes, John S. ; Lammert, R.M. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL
fDate :
8/4/1994 12:00:00 AM
Abstract :
Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency, ridge waveguide InGaAs/GaAs quantum well distributed Bragg reflector laser with two top contacts. Single longitudinal mode emission with over 30 dB of sidemode suppression is observed throughout a tuning range of 6 nm with 60 mA of injection current in the grating section. The tuning mechanism for these devices is dominated by current injection heating rather than carrier depression of the refractive index
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser tuning; optical waveguides; semiconductor lasers; semiconductor quantum wells; 60 mA; InGaAs-GaAs; InGaAs-GaAs quantum well; carrier injection; current injection heating; distributed Bragg reflector lasers; emission wavelength; grating section; sidemode suppression; single longitudinal mode emission; tuning range; two-pad ridge waveguide; wavelength tunable lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940916
