High-power individually addressable monolithic four-beam array of GaAlAs window diffusion stripe lasers

A window structure has been applied, for the first time, to the individually addressable monolithic array of GaAlAs high-power lasers. A 100-μm spaced array of four window diffusion stripe lasers with a long-cavity of 600 μm has been fabricated by controllable open-tube two-step diffusion and single-step metalorganic chemical vapor deposition. The window structure and the p-type active stripes with a sufficiently narrow width around 2 μm are formed by diffusion of zinc, which just passes through an n-type active layer. CW output power up to 120 mW without catastrophic damage and a threshold current around 30 mA have been achieved for each element in the wavelength range of 830 nm. Excellent uniformity of device characteristics across an array chip is confirmed. Thermal crosstalk of the elements operating simultaneously is investigated