DocumentCode
1150708
Title
Two-photon gain semiconductor amplifier
Author
Ironside, Charles N.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
28
Issue
4
fYear
1992
fDate
4/1/1992 12:00:00 AM
Firstpage
842
Lastpage
847
Abstract
Semiconductors are proposed as two-photon gain media. The size of the effect and the conditions necessary to observe two-photon gain are determined by employing a low-temperature approximation that allows a simple combination of two-photon absorption theory and semiconductor laser theory. Two-photon gain amplifiers based on electrically pumped GaAs heterostructures and optically pumped InSb are discussed
Keywords
III-V semiconductors; gallium arsenide; indium antimonide; optical pumping; semiconductor junction lasers; two-photon processes; III-V semiconductors; electrically pumped GaAs heterostructures; low-temperature approximation; optically pumped InSb; semiconductor laser theory; two-photon absorption theory; two-photon gain semiconductor amplifier; Absorption; Conductors; Laser theory; Optical amplifiers; Optical pumping; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Temperature;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.135201
Filename
135201
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