Title :
10 000 h, 30-50 mW CW operation of 670-690 nm visible laser diodes
Author :
Shima, Akio ; Watanabe, Hiromi ; Tada, Hishashi ; Arimoto, S. ; Kamizato, T. ; Omura, E. ; Otsubo, M.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo
fDate :
8/4/1994 12:00:00 AM
Abstract :
The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the nonwindow 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; reliability; semiconductor lasers; semiconductor quantum wells; 10000 h; 30 to 50 mW; 30 to 60 degC; 670 to 690 nm; AlGaInP; CW operation; high-power AlGaInP red laser diodes; multiquantum barrier; nonwindow lasers; reliability; strained double quantum well active layer; visible laser diodes; window lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940912
