DocumentCode
1150762
Title
1.3 μm wavelength, low-threshold strained quantum well laser on p-type substrate
Author
Nobuhara, H. ; Inoue, T. ; Watanabe, T. ; Tanaka, K. ; Odagawa, T. ; Abe, T. ; Wakao, K.
Author_Institution
Opt. Interconnection Div., Fujitsu Labs. Ltd., Atsugi, Japan
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1292
Lastpage
1293
Abstract
The authors fabricated 1.3 μm wavelength strained quantum well lasers on a p-type substrate. Extremely low threshold currents (1.0 mA at 20°C, 3.5 mA at 80°C) were obtained with the optimised structure. 1 Gbit/s modulation was demonstrated at close to zero bias with an eye opening of 62%
Keywords
optical communication equipment; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.0 mA; 1.3 micron; 20 degC; 3.5 mA; 80 degC; eye opening; low-threshold strained quantum well laser; optimised structure; p-type substrate; threshold currents; zero-bias modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940918
Filename
311982
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