Title :
1.3 μm wavelength, low-threshold strained quantum well laser on p-type substrate
Author :
Nobuhara, H. ; Inoue, T. ; Watanabe, T. ; Tanaka, K. ; Odagawa, T. ; Abe, T. ; Wakao, K.
Author_Institution :
Opt. Interconnection Div., Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
8/4/1994 12:00:00 AM
Abstract :
The authors fabricated 1.3 μm wavelength strained quantum well lasers on a p-type substrate. Extremely low threshold currents (1.0 mA at 20°C, 3.5 mA at 80°C) were obtained with the optimised structure. 1 Gbit/s modulation was demonstrated at close to zero bias with an eye opening of 62%
Keywords :
optical communication equipment; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.0 mA; 1.3 micron; 20 degC; 3.5 mA; 80 degC; eye opening; low-threshold strained quantum well laser; optimised structure; p-type substrate; threshold currents; zero-bias modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940918
