Improving InAs double heterostructure lasers with better confinement

Author

Tsou, Y. ; Ichii, A. ; Garmire, Elsa M.

Author_Institution

Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA

Volume

28

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1261

Lastpage

1268

Abstract

The authors have conducted a theoretical study of InAs double heterostructure lasers. Carrier leakage due to drift current is shown to be the main mechanism of the injected carriers in lasers fabricated to date. Reduction of carrier leakage is shown to be possible by using wider bandgap lattice-matched material as the cladding layers. Increased optical confinement is also required to achieve the lowest possible threshold current, which strongly affects the highest lasing temperature achievable. An InAs double heterostructure employing AlAs_0.16Sb_0.84 as the cladding material is proposed. Simulation on this structure indicates that its threshold current density will be dominated by Auger recombination for most of the temperature range below 300 K, the estimated highest lasing temperature

Keywords

III-V semiconductors; indium compounds; semiconductor junction lasers; AlAs_0.16Sb_0.84; Auger recombination; III-V semiconductor; InAs double heterostructure lasers; carrier leakage; cavity loss; cladding layers; drift current; injected carriers; lasing temperature; lattice-matched material; operating temperature range; optical confinement; simulation; theoretical study; threshold current density; Carrier confinement; Chemical industry; Chemical lasers; Laser theory; Optical materials; Photonic band gap; Radiative recombination; Semiconductor lasers; Temperature distribution; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135266

Filename

135266