Title :
Spontaneous emission factor of a microcavity DBR surface emitting laser. II. Effects of electron quantum confinements
Author :
Baba, Toshihiko ; Hamano, Tetsuko ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
For pt.I see ibid., vol.27, p.1347-58 (1991). A method for the theoretical analysis of the spontaneous emission factor (C factor) has been developed for microcavity distributed Bragg reflector (DBR) surface emitting lasers having various quantum-well active regions. It is shown that the C factor can be enlarged by the enhancement of mode density, the anisotropic emission, and the narrow spectral width in quantum wells. C~0.6 may be obtained with GaAs-AlAs DBRs, 0.55 μm×0.55 μm cross section of the cavity, three times vertically long cross section of quantum-wire active regions, and the spectral width of several nanometers at room temperature. This value can be further increased by utilizing a narrower spectral width expected at low temperature
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; semiconductor junction lasers; GaAs-AlAs; III-V semiconductors; anisotropic emission; cross section; electron quantum confinements; linearly polarized lasing mode; microcavity distributed Bragg reflector surface emitting lasers; mode density; quantum wells; quantum-wire active regions; spectral width; spontaneous emission factor; theoretical analysis; Anisotropic magnetoresistance; Distributed Bragg reflectors; Laser modes; Laser theory; Microcavities; Quantum well lasers; Spontaneous emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
