Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET´s using Ge-implantation

Author

Wei, Hua-Fang ; Chung, James E. ; Kalkhoran, Nader M. ; Namavar, Fereydoon

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2096

Lastpage

2103

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage

Keywords

MOSFET; SIMOX; interface states; ion implantation; leakage currents; minority carriers; Ge-implantation; SIMOX wafers; Si:Ge-SiO₂; back interface region; back-channel off-state leakage; channel defect engineering; front-channel gate-induced-drain-leakage; fully-depleted SOI n-MOSFET; minority-carrier lifetime killers; off-state leakage suppression; parasitic bipolar effects suppression; parasitic bipolar gain; source-to-drain breakdown voltage; subgap energy states; Annealing; Capacitance measurement; Crystallization; Energy states; Fabrication; Germanium; Implants; Lattices; MOSFET circuits; Oxidation; Power engineering and energy; Production; Silicon; Silicon on insulator technology; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477766

Filename

477766