Title :
Rapid deposition of high-quality silicon-oxinitride waveguides
Author :
Kapser, K. ; Wagner, C. ; Deimel, P.P.
Author_Institution :
Messerschmitt Bolkow-Blohm GmbH, Munchen, West Germany
Abstract :
Planar silicon-oxinitride (SiON) waveguides have been deposited onto a thermally oxidized silicon substrate at temperatures of about 300 degrees C using a PECVD-process with SiH/sub 4/ and N/sub 2/O. A high deposition power of 500 W ( approximately=1.6 W/cm/sup 2/) leads to deposition rates of up to 1000 nm/min. The variation of the refractive index across a 4 in wafer was less than 1% and the absorption at 633 nm was less than 0.6 dB/cm. The influence of the deposition power on the refractive index and chemical composition was investigated using Auger-measurements and high-temperature (1060 degrees C) annealing.<>
Keywords :
chemical vapour deposition; integrated optics; optical waveguides; refractive index; silicon compounds; 0.6 dB; 1060 degC; 300 degC; 500 W; 633 nm; Auger-measurements; N/sub 2/O; PECVD-process; Si substrate; SiH/sub 4/; SiON; chemical composition; chemical vapour deposition; deposition rates; high deposition power; high temperature annealing; light absorption; rapid planar waveguide deposition; refractive index; silicon-oxinitride waveguides; thermally oxidized; Geometrical optics; Liquid crystals; Optical filters; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Photonic crystals; Refractive index; Silicon;
Journal_Title :
Photonics Technology Letters, IEEE
