Enhancement of electric field-induced refractive-index variation in a (GaInAsP)(InAs)/InP asymmetric multiple-quantum-film (MQF) structure

Author

Suzaki, Yasumasa ; Arai, Shigehisa ; Baba, Satoshi ; Kohtoku, Masaki

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

3

Issue

12

fYear

1991

Firstpage

1110

Lastpage

1112

Abstract

The authors report the field-induced refractive-index variation in (GaInAsP)/InP asymmetric quantum-film structures. An enhancement of an electric field-induced refractive-index variation due to the quantum confined Stark effect was theoretically found in the GaInAsP-InAs/InP asymmetric quantum-film structure, especially in a low electric-field regime. Almost two times higher sensitivity was experimentally confirmed in a 40-period GaInAsP (8 nm)-InAs (0.3-0.6 nm)/InP (8 nm) asymmetric multiple quantum-film (MQF) structure in comparison with a symmetric one without an InAs layer at an applied electric field less than 6 V/ mu m.<>

Keywords

III-V semiconductors; Stark effect; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical films; refractive index; semiconductor quantum wells; semiconductor superlattices; GaInAsP-InAs-InP; InP barrier layers; applied electric field; asymmetric multiple-quantum-film; electric field-induced refractive-index variation; low electric-field regime; quantum confined Stark effect; semiconductors; sensitivity; Charge carrier processes; Communication switching; Indium phosphide; Optical fiber communication; Optical modulation; Optical refraction; Potential well; Quantum mechanics; Refractive index; Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.118018

Filename

118018