High-speed InP/InGaAs avalanche photodiodes with a compositionally graded quaternary layer

InP/InGaAs avalanche photodiodes (APDs) with a compositionally graded quaternary layer at the heterointerface between the InGaAs absorption and InP multiplication regions were fabricated and tested. A comparison of samples with the graded layer and with conventional three quaternary layers showed that the frequency characteristics for samples with the graded layer did not deteriorate at a low bias voltage even below -100 degrees C, unlike APDs with three InGaAsP layers. Thus, no hole trapping occurred at the InP/InGaAs heterointerface with the graded layer. A sample with the graded layer showed a cutoff frequency exceeding 9 GHz at a low multiplication factor of 2. The authors found InP/InGaAs APDs with the compositionally graded quaternary layer to be useful over a wide temperature range.<>