Title :
High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products
Author :
Kito, Y. ; Kuwatsuka, H. ; Kumai, T. ; Makiuchi, M. ; Uchida, T. ; Wada, O. ; Mikawa, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Planar InP/InGaAs avalanche photodiodes (APDs) have been fabricated by adopting a flip-chart configuration and a monolithic lens structure. These APDs exhibit an ultralow capacitance of 70 fF, a quantum efficiency of 80%, a wide bandwidth of 7 GHz, and a large gain-bandwidth product of 80 GHz.<>
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optics; lenses; 7 GHz; 70 fF; InP-InGaAs; avalanche photodiodes; flip-chart configuration; high-speed APDs; large gain-bandwidth products; monolithic lens structure; planar APD; quantum efficiency; semiconductors; ultralow capacitance; wide bandwidth; Absorption; Avalanche photodiodes; Bandwidth; Bonding; Indium gallium arsenide; Indium phosphide; Lenses; Parasitic capacitance; Quantum capacitance; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
