A polycide gate electrode with a conductive diffusion barrier formed with ECR nitrogen plasma for dual gate CMOS

Author

Hosoya, Tetsuo ; Machida, Katsuyuki ; Imai, Kazuo ; Arai, Eisuke

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2111

Lastpage

2116

Abstract

A simple diffusion barrier technology for polycide gate electrodes is presented. An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas and without substrate heating. The silicon nitride layer acts as an excellent barrier to impurity diffusion from polysilicon to silicide. It was found that barrier formation with ECR nitrogen plasma results in no fatal degradation in the MOS interface characteristics. This technology is very effective for making dual polycide gates inexpensively due to its simplicity and a good affinity with conventional ULSI fabrication processes

Keywords

CMOS integrated circuits; diffusion barriers; integrated circuit metallisation; nitridation; plasma deposited coatings; ECR nitrogen plasma; MOS interface characteristics; ULSI fabrication; conductive diffusion barrier; dual gate CMOS; impurity diffusion; polycide electrode; polysilicon; silicide; silicon nitride layer; surface nitridation; Degradation; Electrodes; Fabrication; Heating; Impurities; Nitrogen; Plasma properties; Silicides; Silicon; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477768

Filename

477768