Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms

The authors report the selective and alignable deposition of patterned thin-film epitaxial GaAs/GaAlAs devices onto a host substrate such as silicon for low cost, manufacturable hybrid integrated optoelectronic circuits. The authors use a thin polyimide diaphragm as the transparent transfer medium for these patterned epitaxial devices. Each of these devices or a group of these devices on the polyimide is then optically aligned and selectively deposited onto the host substrate. The use of the polyimide transfer diaphragm also allows both the bottom and the top of the device to be processed while under substrate support. Using this technique, a light emitting diode 50*50 mu m in area and 2 mu m thick was grown on a GaAs substrate, lifted off, aligned and selectively deposited onto a silicon host substrate, and electrically contacted and tested.<>