Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine

Author

Liu, C.Y. ; Yoon, S.F. ; Wang, S.Z. ; Yuan, S. ; Dong, J.R. ; Teng, J.H. ; Chua, S.J.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

152

Issue

4

fYear

2005

Firstpage

205

Lastpage

208

Abstract

GaInP/AlGaInP triple quantum well (TQW) laser structures were grown by low-pressure metalorganic chemical vapour deposition (MOCVD) with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). Device fabrication was carried out using the pulsed anodic oxidation (PAO) process, which was optimised for the (Al_0.7Ga_0.3)_0.52In_0.48P upper cladding layer of the laser structure using photoluminescence (PL) measurements and atomic force microscopy (AFM) characterisation. AlGaInP laser diodes, grown with TBAs and TBP, fabricated under the optimised oxidation conditions, exhibit the lowest reported threshold current density (J_th) of 1.5 kA/cm² at room temperature (RT) under pulsed operation.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; atomic force microscopy; claddings; current density; gallium compounds; indium compounds; organic compounds; oxidation; photoluminescence; quantum well lasers; semiconductor growth; 20 degC; GaInP-AlGaInP; GaInP/AlGaInP triple quantum well; MOCVD; atomic force microscopy; cladding layer; laser diodes; low-pressure metalorganic chemical vapour deposition; photoluminescence; pulsed anodic oxidation; tertiarybutylarsine; tertiarybutylphosphine; threshold current density;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20045037

Filename

1499616