Title :
Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine
Author :
Liu, C.Y. ; Yoon, S.F. ; Wang, S.Z. ; Yuan, S. ; Dong, J.R. ; Teng, J.H. ; Chua, S.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
GaInP/AlGaInP triple quantum well (TQW) laser structures were grown by low-pressure metalorganic chemical vapour deposition (MOCVD) with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). Device fabrication was carried out using the pulsed anodic oxidation (PAO) process, which was optimised for the (Al0.7Ga0.3)0.52In0.48P upper cladding layer of the laser structure using photoluminescence (PL) measurements and atomic force microscopy (AFM) characterisation. AlGaInP laser diodes, grown with TBAs and TBP, fabricated under the optimised oxidation conditions, exhibit the lowest reported threshold current density (Jth) of 1.5 kA/cm2 at room temperature (RT) under pulsed operation.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; atomic force microscopy; claddings; current density; gallium compounds; indium compounds; organic compounds; oxidation; photoluminescence; quantum well lasers; semiconductor growth; 20 degC; GaInP-AlGaInP; GaInP/AlGaInP triple quantum well; MOCVD; atomic force microscopy; cladding layer; laser diodes; low-pressure metalorganic chemical vapour deposition; photoluminescence; pulsed anodic oxidation; tertiarybutylarsine; tertiarybutylphosphine; threshold current density;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20045037
