Title :
0-1 GHz waveguide 10.6 μm GaAs electrooptic modulator
Author :
Brown, Robert T.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
A GaAs electrooptic modulator for use in 10.6-μm laser frequency shifting applications is described. High-beam-quality output signals with a frequency tunability of 0.1-1.0 GHz were demonstrated. Thick epitaxial GaAs-AlGaAs waveguide structures were successfully fabricated into single-mode channel waveguides with excellent optical and electrooptic properties. A lumped-element modulator, with electrical and electrooptic characteristics in good agreement with theory, was operated at RF drive power levels up to the reverse breakdown voltage limit. The insertion loss of the modulator was quite high, due to absorption losses in the epitaxial material
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; optical modulation; 10.6 micron; GaAs electrooptic modulator; III-V semiconductor; absorption losses; electrooptic properties; frequency tunability; insertion loss; laser frequency shifting applications; lumped-element modulator; output signals; reverse breakdown voltage limit; single-mode channel waveguides; thick epitaxial GaAs-AlGaAs waveguide structures; Electrooptic modulators; Electrooptical waveguides; Frequency; Gallium arsenide; Laser applications; Laser theory; Lasers and electrooptics; Optical losses; Optical waveguide theory; Optical waveguides;
Journal_Title :
Quantum Electronics, IEEE Journal of
