DocumentCode
1151604
Title
Four-state model for the Schottky transistor
Author
Malik, N.R.
Author_Institution
Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
Volume
37
Issue
3
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
303
Lastpage
305
Abstract
Static operation of the Schottky-clamped transistor is described in terms of four simple models, cutoff, active, clamp, and reverse clamp; where the clamp model closely resembles the saturation model for an unclamped transistor. With these models one can describe details of circuits containing Schottky transistors using simple equivalent circuits
Keywords
Schottky-barrier diodes; bipolar transistors; education; electronic engineering; equivalent circuits; semiconductor device models; Schottky-clamped transistor; active model; bipolar junction transistor; clamp model; cutoff model; equivalent circuits; four-state model; reverse clamp model; saturation model; unclamped transistor; Circuit analysis; Clamps; Education; Equivalent circuits; Logic circuits; Modems; Schottky diodes; Silicon; Terminology; Voltage;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/13.312143
Filename
312143
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