Title :
Four-state model for the Schottky transistor
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
Static operation of the Schottky-clamped transistor is described in terms of four simple models, cutoff, active, clamp, and reverse clamp; where the clamp model closely resembles the saturation model for an unclamped transistor. With these models one can describe details of circuits containing Schottky transistors using simple equivalent circuits
Keywords :
Schottky-barrier diodes; bipolar transistors; education; electronic engineering; equivalent circuits; semiconductor device models; Schottky-clamped transistor; active model; bipolar junction transistor; clamp model; cutoff model; equivalent circuits; four-state model; reverse clamp model; saturation model; unclamped transistor; Circuit analysis; Clamps; Education; Equivalent circuits; Logic circuits; Modems; Schottky diodes; Silicon; Terminology; Voltage;
Journal_Title :
Education, IEEE Transactions on
