Title :
A 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFETs
Author :
Hou, Chin-Shan ; Wu, Ching-Yuan
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
12/1/1995 12:00:00 AM
Abstract :
A two-zone Green´s function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFETs, in which the exact solution of 2-D Poisson´s equation is obtained by using the appropriate boundary conditions. From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier. The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 μm with wide ranges of structure parameters and bias conditions
Keywords :
Green´s function methods; Schottky gate field effect transistors; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; voltage distribution; 0.1 micron; 2D Poisson equation; 2D analytic model; Si; Si SOI MESFET; drain-induced barrier lowering effect; fully depleted SOI MESFET; minimum channel potential barrier; potential distribution; short gate-length MESFET; threshold-voltage model; two-zone Green function solution method; Boundary conditions; CMOS technology; Gallium arsenide; Green´s function methods; MESFETs; MOS devices; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor films; Silicon; Threshold voltage; Ultra large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
