Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

Author

Yang, Chien Kuo ; Lei, Tan Fu ; Lee, Chung Len

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2163

Lastpage

2169

Abstract

The electrical characteristics of top-gate thin-film transistors (TFT´s) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2×10¹²-2×10¹⁴ ions/cm² were investigated in this work. The experimental results showed that nitrogen implanted into polysilicon followed by an 850°C 1 h annealing step had some passivation effect and this effect was much enhanced by a following H₂-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT´s were all improved. Moreover, the hot-carrier reliability was also improved. A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT´s

Keywords

MISFET; annealing; carrier mobility; hot carriers; ion implantation; nitrogen; passivation; semiconductor device reliability; silicon; thin film transistors; 1 hour; 850 C; H₂; H₂ plasma treatment; N-implanted polysilicon films; ON-OFF current ratios; Si:N; annealing; donor effect; electrical characteristics; field effect mobilities; hot-carrier reliability; n-channel devices; p-channel devices; passivation effect; subthreshold swings; thin-film transistors; threshold voltages; top-gate TFT; Annealing; Boron; Electric variables; Hot carriers; Nitrogen; Passivation; Plasma applications; Plasma devices; Semiconductor films; Silicon; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477775

Filename

477775