Title :
On-wafer verification of a large-signal MESFET model
Author :
Curtice, W.R. ; Pak, S.
Author_Institution :
MSC, Somerset, NJ, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
A relatively simple and new RF measurement procedure that can be made on wafers is used to verify a foundry model for test FETs. The nonlinear FET model agrees well with the measured devices with respect to the gain, gain compression at fundamental frequency, and power output at second and third harmonics. It is particularly significant that these test chips were not used in earlier measurements made to develop the mode
Keywords :
Schottky gate field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; GaAs; RF measurement procedure; gain compression; large-signal MESFET model; microwave devices; nonlinear model; power output; FETs; Foundries; Frequency measurement; Gain measurement; MESFETs; Power measurement; Radio frequency; Semiconductor device measurement; Semiconductor device modeling; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
