DocumentCode
1151822
Title
On-wafer verification of a large-signal MESFET model
Author
Curtice, W.R. ; Pak, S.
Author_Institution
MSC, Somerset, NJ, USA
Volume
37
Issue
11
fYear
1989
fDate
11/1/1989 12:00:00 AM
Firstpage
1809
Lastpage
1811
Abstract
A relatively simple and new RF measurement procedure that can be made on wafers is used to verify a foundry model for test FETs. The nonlinear FET model agrees well with the measured devices with respect to the gain, gain compression at fundamental frequency, and power output at second and third harmonics. It is particularly significant that these test chips were not used in earlier measurements made to develop the mode
Keywords
Schottky gate field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; GaAs; RF measurement procedure; gain compression; large-signal MESFET model; microwave devices; nonlinear model; power output; FETs; Foundries; Frequency measurement; Gain measurement; MESFETs; Power measurement; Radio frequency; Semiconductor device measurement; Semiconductor device modeling; Testing;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.41048
Filename
41048
Link To Document