Title :
A novel silicon carbide based high-bidirectional switching device for high-voltage control applications
Author :
Hwang, J.D. ; Fang, Y.K. ; Chan, Karen H. ; Chiu, H.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
12/1/1995 12:00:00 AM
Abstract :
A new structure of metal/i-SiC/c-Si(n+-P) (MISS) bidirectional switching device is successfully developed for the first time. A thick sputtered SiC layer is used, instead of the thin insulating layer in the conventional MISS structure. Due to the wide band gap of the silicon carbide (2.3 eV for β-SiC), this bidirectional switching device possesses a high switching voltage, e.g. 134 V for the 3000 Å silicon carbide thickness. The corresponding switching currents and holding current are 0.16 mA and 1.1 mA, respectively. Experimental results show the switching voltage Vs increases with increasing intrinsic silicon carbide thickness. This study indicates that the silicon carbide bidirectional switching device is a promising element for high-voltage switching applications
Keywords :
MIS devices; elemental semiconductors; negative resistance devices; semiconductor materials; semiconductor switches; silicon; silicon compounds; 0.16 mA; 1.1 mA; 134 V; MIS structures; SiC-Si; high-bidirectional switching device; high-voltage switching applications; holding current; negative resistance; switching currents; switching voltage; wide band gap; Anodes; Argon; Cathodes; Etching; Fabrication; Insulation; Silicon carbide; Sputtering; Substrates; Voltage; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
